etched asml alignment marks into poly. the etch rate is much slower than past runs and also not consistent from session to session and not uniform within a wafer.
etch data-
target: 1200A etch into poly
program 4
previous run as reference:
5min -> ~1200A +/- <100A
10/8 test etch #1:
5min -> 700A-770A (much slower etch rate)
10/8 test etch #2:
7.8min -> 1224-1296A (fairy consistent with etch #1 rate)
10/8 actual etch:
7.8min etch
wafer 1: 1398 - 1748A (non-uniform and inconsistent with test etch #2)
wafer 2: 2000 - 3800A (inconsistent with wafer 1 and test etch #2 and very non-uniform)
Monday, October 11, 2010
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